High temperature effects on the impact ionization of the n-channel fully depleted (FD) SOI MOSFET are investigated over a wide range of temperature from 300 to the 600 K by using TCAD. In particular, we have studied the current voltage characteristics (Id-Vd and Id-Vg ) , threshold voltage (Vth)and transconductance (gm). By the simulation results, we have analyzed that impact ionization decreases with increasing the temperature and vice versa. Furthermore, we have observed that threshold voltage and transconductance are both inversely proportional to the temperature.
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Author Name: K. Ullah, S. Riaz, M.Habib, F. Abbas, S. Naseem, G. Abbas
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Keywords: Impact Ionization, Fully Depleted, TCAD Transconductance
ISSN: 2409-2770
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