The multiple quantum well structure is especially consructed from GaAs and AlxGa1-xAs materials. To construct the quantum wells, the aluminium concentration is graded over much longer distances to aid in the trapping of injected carriers in the control region where the recombination takes place by transitions between allowed states in the quantum wells formed by sandwitching these layers of GaAs between even thinner layers of AlAs. The change in the aluminium concentration creates a high waveguide for the fields being amplified. The beginning and terminating quantum layers affect the wave functions of the electrons (or holes) in the confining structure somewhat. The confining layers create potential barriers to the wave functions of the electrons (or holes) trapped in GaAs well. In the quantum structure the distances are so small, comparable to the deBroglie wavelength. The density of states are a constant and dependent on quantum size and quantizations. The band gap and index of refraction of material vary in the opposite directions as the percentage of aluminium in the alloys is changed. The confinement degrees of charged carriers are determined by the confinement factors. The confinement factor directly affects the laser gain, too.
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Author Name: Mustafa TEM?Z
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Keywords: Quantum well, Laser, Confinement factor